fine fine spn spn fine silicon power networks fine fine spn spn fine silicon power networks FGM100D06V1 preliminary ?half-bridge? igbt features ? 10 s short circuit capability ? low turn-off losses ? short tail current applications ? ac & dc motor controls ? general purpose inverters ? optimized for high current inverter stages (ac tig welding machines) ? servo controls ? ups ? robotics package : v1 absolute maximum ratings @ tc = 25 (per leg) symbol parameter test condition rating unit v ces collector-to-emitter voltage v ge = 0v, i c = 250 a 600 v v ges gate emitter voltage 20 v i c continuous collector current t c = 70 (25 ) 100(130) a i cm pulsed collector current t c = 70 (25 ) 200(260) a i f diode continuous forward current t c = 70 (25 ) 80(100) a i fm diode maximum forward current 200 a t sc short circuit withstand time t c = 100 10 s v iso isolation voltage test ac 1 minute 2500 v t j junction temperature -40 ~ 150 t stg storage temperature -40 ~ 125 weight weight of module 190 g power terminal screw : m5 3.5 nm mounting torque terminal connection screw : m5 3.5 nm electrical characteristics @ tj = 25 (unless otherwise specified) symbol parameter min typ max unit test condition v (br)ces collector-to-emitter breakdown voltage 600 - - v ge = 0v, i c = 250 a v ce(on) collector-to-emitter saturation voltage - 2.2 2.7 i c = 100a, v ge = 15v v ge(th) gate threshold voltage 3.0 4.5 6.0 v v ce = v ge, i c = 250 a i ces zero gate voltage collector current - - 500 a v ge = 0v, v ce = 600v i ges gate-to-emitter leakage current - - 100 na v ce = 0v, v ge = 20v v fm diode forward voltage drop - 1.6 1.9 v i c = 100a v ces = 600v ic = 100a v ce(on) typ. = 2.2v @ ic = 100a - 1 - www.datasheet.co.kr datasheet pdf - http://www..net/
fine fine spn spn fine silicon power networks fine fine spn spn fine silicon power networks FGM100D06V1 preliminary switching characteristics @ tj = 25 (unless otherwise specified) symbol parameter min typ max unit test condition c ies input capacitance - 6900 - c oss output capacitance - 730 - c res reverse transfer capacitance - 190 - pf v ce = 30v, v ge = 0 v f = 1.0mhz t d(on) turn-on delay time - 82 - t r rise time - 107 - t d(off) turn-off delay time - 282 423 t f fall time - 97 146 ns t j = 25 , v cc = 480v i c = 60a , v ge = 15v r g = 5.0 ? i rr diode peak reverse recovery current - 13 20 a t rr diode reverse recovery time - 140 210 ns t j = 125 , v r = 200v i f = 60a thermal characteristics symbol parameter min typ max unit r jc junction-to-case (igbt part, per 1/2 module) - - 0.31 r jc junction-to-case (diode part, per 1/2 module) - - 0.7 r cs case-to-heat sink (conductive grease applied) - 0.05 - /w - 2 - www.datasheet.co.kr datasheet pdf - http://www..net/
fine fine spn spn fine silicon power networks fine fine spn spn fine silicon power networks FGM100D06V1 preliminary fig 1. maximum dc collector current vs. case temperature fig 2. power dissipation vs. case temperature fig 3. typ. igbt output characteristics fig 4. maximum forward voltage drop vs. instantaneous forward current - 3 - www.datasheet.co.kr datasheet pdf - http://www..net/
fine fine spn spn fine silicon power networks fine fine spn spn fine silicon power networks FGM100D06V1 preliminary fig 5. typical transfer characteristics fig 6. typ. capacitance vs. v ce fig 7. typical gate charge vs. v ge fig 8. turn-off soa - 4 - www.datasheet.co.kr datasheet pdf - http://www..net/
fine fine spn spn fine silicon power networks fine fine spn spn fine silicon power networks FGM100D06V1 preliminary fig 9. maximum effective transient thermal impedance, junction-to-case - 5 - www.datasheet.co.kr datasheet pdf - http://www..net/
fine fine spn spn fine silicon power networks fine fine spn spn fine silicon power networks FGM100D06V1 preliminary package outline (dimensions in mm) c2e1 e2 c1 data and specifications subj ect to change without notice. may 2006 sales & marketing gyeonggi technopark p1-311 1271-11 sa1-dong, sangnok-gu, ansan, korea tel)+82-31-500-3517, fax)+82-31-500-3510 headquarter (www.finespn.com) 305-11, wonnam-ri, eumbong-myun, asan-city, chungcheongnam-do, korea tel)+82-41-544-3585, fax)+82-41-544-3582 - 6 - www.datasheet.co.kr datasheet pdf - http://www..net/
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